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Other articles related with "conductive filament"：
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97502 |
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Current-dependent positive magnetoresistance inLa0.8Ba0.2MnO3 ultrathin films |
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Chin. Phys. B
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127303 |
Han-Lu Ma(马寒露), Zhong-Qiang Wang(王中强), Hai-Yang Xu(徐海阳), Lei Zhang(张磊), Xiao-Ning Zhao(赵晓宁), Man-Shu Han(韩曼舒), Jian-Gang Ma(马剑钢), Yi-Chun Liu(刘益春) |
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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments |
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Chin. Phys. B
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127301 |
Zhao Jing (赵晶), Dong Jing-Yu (董静雨), Ren Shu-Xia (任书霞), Zhang Li-Yong (张礼勇), Zhao Xu (赵旭), Chen Wei (陈伟) |
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First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory |
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Chin. Phys. B
2014 Vol.23 (12): 127301-127301
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117305 |
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明) |
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Resistive switching characteristics of Ti/ZrO2/Pt RRAM device |
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Chin. Phys. B
2014 Vol.23 (11): 117305-117305
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107306 |
Deng Ning (邓宁), Pang Hua (庞华), Wu Wei (吴畏) |
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Effects of different dopants on switching behavior of HfO2-based resistive random access memory |
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Chin. Phys. B
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